On R-type substrates, different deposited silicon externally elongated crystals have been employed in microelectronic integrated circuits (MICs). Sapphire is the greatest choice for hybrid substrates, such as microwave integrated circuits, because of its high capacitance. Epitaxial silicon film can also be used to create high-speed integrated circuits and pressure sensors. To make mounds, other superconducting components, high resistance resisters and gallium arsenide using R-type substrate growth is also possible.
Dopants and impurities alter the semiconductor characteristics of Sapphire Ingot, which is an insulating material. Purity control isn't solely based on thorough monitoring of substrate materials (silicon, gallium arsenide, indium phosphide…). Although some trace dopants vary their optical properties (colour, photoconductive range), which is significant for applications in certain domains (Optics, military) Read more
